Researchers from the Electronic Ceramics Department of the Jozef Stefan Institute, in collaboration with colleagues from the National Institute of Chemistry in Ljubljana, Ecole Polytechnique Fédérale de Lausanne, and Université Paris-Saclay, CentraleSupélec, have published an article in Nanoletters entitled Atomic-level response of the domain walls in bismuth ferrite in a sub-coercive-field regime. The article presents an in situ scanning transmission electron microscopy study in which the response of domain walls in a ferroelectric bismuth ferrite single crystal in a capacitor-like configuration was directly observed. The dynamics of domain walls, in the presence of defects, reveals unique and complex phenomena at the atomic level; the authors report defect segregation, changes in strain and the bound charge distribution at domain walls under electrical stimuli. The study provides insight into the dynamic, atomistic processes at domain walls in ferroelectric materials. The authors also design a Supplementary cover image for this issue.